首页> 外文会议>Micro- and Nanoelectronics 2007 >Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation
【24h】

Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation

机译:温度对常规短沟道MOSFET中电子传输的影响:蒙特卡洛模拟

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Monte Carlo model of electron transport in short channel MOSFETs at different temperatures ranging from -50℃ (223 K) to +50℃ (323 K) are proposed. MOSFETs with the channel length equal to 0.5, 0.2 and 0.1 μm are studied by using Monte Carlo simulation. Three mechanisms of temperature effect on electron properties are discussed for studied devices. Temperature influence on the values of drift velocity, mobility, electron energy and electric field in different parts of conducting channel is dealt with at studied conditions. It is shown that for MOSFET with the channel length equal to 0.1 μm obtained temperature dependencies demonstrate an appreciable divergence from ones for MOSFET with channel length equal to 0.5 μm.
机译:提出了在-50℃(223 K)至+ 50℃(323 K)不同温度下短沟道MOSFET中电子传输的蒙特卡洛模型。使用蒙特卡洛模拟研究了沟道长度等于0.5、0.2和0.1μm的MOSFET。讨论了温度对电子性能的三种机理。在研究条件下,研究了温度对导电通道不同部位的漂移速度,迁移率,电子能量和电场值的影响。结果表明,对于沟道长度等于0.1μm的MOSFET,所获得的温度依赖性与沟道长度等于0.5μm的MOSFET的温度依赖性存在明显差异。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号