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Investigation of re-switching properties of ferromagnetic contacts inPy/Mo microstructures

机译:Py / Mo微结构中铁磁触点的重切换特性研究

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摘要

By means of magnetoresistance and magnetic force microscopy (MFM) measurements the electrical and magnetic properties of ferromagnetic strips and crosses of hybrid nanostructures Py/Mo (Py - permalloy (Ni _(80) Fe _(20)), Mo -molybdenum) have been investigated. Unusual behaviour of the cross magnetoresistance in these nanostructures was found. The dependences of the cross resistance against external magnetic field have the image of the curves with hysteresis typical for anisotropic magnetoresistance (AMR). However, they demonstrate anomalous magnetoresistance dependence on orientation relatively to the axis of the ferromagnetic arm of the cross. In the transverse magnetic field (perpendicular to the axis of the ferromagnetic arm) magnetoresistance has two minima as for the longitudinal AMR. In the longitudinal magnetic field (parallel to the axis of ferromagnetic arm) there are two maxima, typical for the transverse AMR. The value of the effect is about one percent. The AMR of the strip has the supplementary extremes, indicated on a more complex character of magnetization reversal, depended on the shape of nanostructures. The data of the magnetoresistance measurements are compared with MFM images.
机译:通过磁阻和磁力显微镜(MFM)测量,杂化纳米结构Py / Mo(Py-坡莫合金(Ni _(80)Fe _(20),Mo-钼)被调查。在这些纳米结构中发现了交叉磁阻的异常行为。交叉电阻对外部磁场的依赖性具有各向异性磁阻(AMR)的典型滞后曲线。但是,它们显示出相对于十字形铁磁臂的轴的方向具有异常的磁阻依赖性。在横向磁场中(垂直于铁磁臂的轴线),纵向AMR的磁阻具有两个最小值。在纵向磁场(平行于铁磁臂的轴线)中,有两个最大值,典型用于横向AMR。效果值约为百分之一。条带的AMR具有补充的极端值,这取决于更复杂的磁化反转特性,具体取决于纳米结构的形状。将磁阻测量的数据与MFM图像进行比较。

著录项

  • 来源
  • 会议地点 Zvenigorod(RU)
  • 作者单位

    Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;

    Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;

    Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;

    Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

    magnetoresistance; cross resistance; magnetic contrast;

    机译:磁阻;交叉电阻;磁衬度;;

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