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Formation of TiN/CoSi_2 bilayer from Co/Ti/Si structure in a non-isothermal reactor

机译:非等温反应器中由Co / Ti / Si结构形成TiN / CoSi_2双层

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摘要

The formation of the TiN/CoSi_2 bilayer from the Co/Ti/Si structure in a non-isothermal reactor was analyzed by Auger electron spectrometer. It was concluded in determination of concentration distribution of the Co, Ti and Si atoms in the samples before and after the thermal annealing. The annealing time was equal to 10 sec and 1 min. It is noted, that both the Co and Ti atoms diffuse at opposite directions. The cobalt atoms move through titanium film to silicon surface. On the contrary, the titanium atoms move through cobalt film to surfaces of the sample. After thermal annealing of the samples, located by silicon surface to the heating source, the formation TiN and CoSi_2 phases is fixed. The forming of these phases at the annealing of the samples, located by structure Co/Ti to the source of the heating, does not occur. This is conditioned by brilliant metallic surface reflecting of radiated energy. As a result necessary temperature regime, for the formation of both of these phases TiN and CoSi_2, was not reached.
机译:通过俄歇电子能谱仪分析了在非等温反应器中由Co / Ti / Si结构形成的TiN / CoSi_2双层。结论是确定热退火前后样品中Co,Ti和Si原子的浓度分布。退火时间等于10秒零1分钟。注意,Co和Ti原子都沿相反的方向扩散。钴原子穿过钛膜移动到硅表面。相反,钛原子穿过钴膜移动到样品表面。在通过硅表面位于加热源的样品进行热退火之后,固定了TiN和CoSi_2相的形成。在样品的退火过程中,不会发生这些相的形成(通过结构Co / Ti定位到加热源)。这取决于辐射能的明亮金属表面反射。结果,没有达到用于形成这两个相TiN和CoSi_2的必要温度范围。

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