Fully Depleted Double-Gate 1T-DRAM Cell with NVM Function for High Performance and High Density Embedded DRAM

摘要

We have investigated a fully depleted double-gate 1-T DRAM cell device which has SONOS type storage node on control gate for nonvolatile memory function. Due to enlarged hole capacity by the large storage node and source/drain junction depth control in the floating body, we could improving data retention time, I_s,(write"1")/I_s,(write"0") and device scalability. Proposed device could be a very promising candidate for a future high density and high performance IT-DRAM cell.