A Novel Damage-Free High-k Etch Technique Using Neutral Beam-Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs

摘要

For the first time, a novel damage-free neutral beam-assisted atomic etching process has successfully demonstrated the removal of the residual high-k dielectric layer after gate patterning. Due to its neutralized atomic flux and chemical reaction, high etch selectivity is observed to improve device performance and reliability. This process should significantly enhance high-k/metal gate manufacturability.