One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

摘要

Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.