Electrical and Chemical Characterization of Al_2O_3 Passivation Layer Deposited by Plasma-Assisted Atomic Layer Deposition in c-Si Solar Cells

摘要

Aluminum oxide (Al_2O_3) film by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. In this study, 10 nm Al_2O_3 film was deposited on crystalline silicon by plasma-assisted atomic layer deposition (PAALD). To optimize concentration of hydrogen in Al_2O_3 film, deposited RF power was changed from 100 W to 900 W. Then, annealing and firing process were conducted. After annealing and firing, fixed charge in Al_2O_3 film was calculated by conductance-voltage measurement (C-V) and structure change was analyzed by XPS because the structure is related to fixed charge.