Crystalline thin silicon cells

摘要

A review of the history and present state of crystalline thin silicon technology is given. Thin silicon cells are defined as consisting of silicon of a thickness of less than 50 microns, which need a substrate to be self supporting. In the beginning of this technology stood the recognition that optical and electrical confinement is needed to reduce silicon thickness. The most widely used deposition technologies (plasma deposition, liquid phase epitaxy and CVD) and substrate materials are reviewed. Critical parameters are the temperature range of the technology and deposition rate. The highest efficiencies on nonsilicon substrates achieved today are 9 to 11%