Synthesis of Si nano-pyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx based MOS diode

机译：Si X / INF> / SI界面的Si纳米金字塔合成增强Si-Rich SiO X / ING> MOS二极管的电致发光

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A 740nm electro-luminescent ITO/SiOx/p-Si/Al MOS diode with Si nano-pyramids synthesized at SiOx/Si interface is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.

机译：带有Si纳米金字塔的740nm电致发光ITO / SiO X / IN / P-SI / AL MOS二极管，在SIO x / SI接口上进行了开启电压。，阈值电流，输出功率和寿命为50 V，1.23mA / cm 2 ，30 nw和10小时。

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《Quantum Electronics and Laser Science Conference;Conference on Lasers and Electro-Optics》|2006年||共2页
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中图分类激光技术、微波激射技术;
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(160.2540) Fluorescent and luminescent materials; (310.6870) Thin films; other properties;

机译：（160.2540）荧光和发光材料;（310.6870）薄膜;其他性质;

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Synthesis of Si nano-pyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx based MOS diode

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