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Chip interconnection technology Gold and gold-tin wafer bumping by electrochemical deposition for flip chip and TAB

机译:芯片互连技术金和金锡晶圆通过电化学沉积进行倒装芯片和突片

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The fabrication of electroplated gold and gold-tin bumps is well established world-wide to metallize chip 10s for Tape Automated Bonding (TAB) and Flip Chip Technology (FC). The method is predestined to realize smallest bump structures and highest 10 counts. Such a bumping process will be presented and characterized in this paper. The single process steps as sputtering, lithographic printing, electrochemical metal deposition and differential etching will be treated in detail. Possibilities, uncertainties and limits of the process will be demonstrated from a practical point of view. To guarantee the reliability of the process in the long term, the kind and effects of possible influencing factors must be known, which is particularly difficult with the electroplating of gold. The used sulfitic electrolytes are subjected to permanent changes of their bath chemistry and require a stringent analytical monitoring. Besides the choice of the right electrolyte the use of specially developed microelectroplating equipment is decisive for the attainable results. For assessing the bump quality, typical features like structural accuracy, roughness, ductility and others are used. To investigate the reliability of bumped ICs electrical measurements and shear tests after thermal cycling were carried out.
机译:电镀金和金锡凸块的制造是全球范围内的全球建立,以金属化芯片10S用于磁带自动粘合(TAB)和倒装芯片技术(FC)。该方法预先确定,以实现最小的凸块结构和最高的10个计数。本文将呈现并表征这种凸起的过程。单个工艺步骤作为溅射,平版印刷,电化学金属沉积和差分蚀刻将详细处理。该过程的可能性,不确定性和限制将从实际的角度来证明。为了保证长期过程的可靠性,必须知道可能影响因素的种类和效果,这对于金的电镀特别困难。使用亚磺酸电解质的永久性变化,并需要严格的分析监测。除了正确的电解质选择外,使用特殊开发的微电泡设备对于可实现的结果是决定性的。为了评估凸块质量,使用结构精度,粗糙度,延展性等的典型特征。为了研究热循环后撞击的IC电测量和剪切试验的可靠性。

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