Single Crystal CVD Diamond Growth for Detection Device Fabrication

摘要

Single crystal (SC) CVD diamond is known to exhibit superior electronic properties compared to polycrystalline diamond for detection applications. In our study, samples were grown using the Chemical Vapor Deposition (CVD) technique in an ASTEX AX 5400 reactor, at various microwave powers and keeping all other parameters constant. The crystalline quality and purity of samples were investigated using Raman spectroscopy and cathodo-luminescence measurements. The diamonds layers were chemically cleaned and oxidized, prior to their fabrication as ionization chambers using Ni and Au contacts for rectifying properties. Device electronic and detection properties were then characterized: Leakage currents were probed from I(V) measurements and contact properties were tested with 60{sup left}Co source at various dose rates. Time of Flight (TOF) and Charge Collection Efficiency (CCE) measurements were evaluated with 241{sup left}Am alpha particles irradiation, which enabled the measurements of mobility, carrier diffusion length and lifetime as a function of growth parameters. These measurements demonstrate the importance of growth condition optimization on the detection quality of these samples.