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(0391)Enhancement of L21-chemical ordering in half-metallic Heusler compound Co_2MnSi by Ag doping

机译:(0391)通过Ag掺杂增强半金属Heusler化合物CO_2MNSI中的L21-化学排序

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摘要

A class of materials called half-metallic Heusler compound, especially Cobalt-based Co2YZ (Y = Mn, Fe, and Z= Si, Ge, Al etc.) compounds have attracted much attention in the recent growing development of spintronics due to the observation of large giant magnetoresistance (GMR)1) and tunnel magnetoresistance (TMR)2) ratios. The full-Heusler compounds crystallized in the L21 structure (X2YZ), may also grow in B2 and A2 structures depending on the disordered state, in which (Y, Z) and (X, Y, Z) are randomly substituted. Enhancement of spin polarization by improving chemical ordering, and reduction of ordering temperature are crucial issues for the further development of spintronic devices using Heusler compounds. In this study we have investigated the effect of doping of Ag on the enhancement of chemical ordering in Heusler compound Co_2MnSi(CMS) since Ag does not mix with CMS.
机译:一类称为半金属Heusler化合物的材料,特别是钴基CO 2(Y = Mn,Fe,Fe,Z = Si,Ge,Al等)化合物在最近由于观察而导致的闪蒸学的日益增长的发展中引起了很多关注大型巨磁阻(GMR)1)和隧道磁阻(TMR)2)比率。在L21结构(X2YZ)中结晶的全年风格化合物也可以在B2和A2结构中生长,这取决于无序状态,其中(y,Z)和(x,y,z)被随机取代。通过改善化学秩序来增强自旋极化,并降低订购温度是使用Heusler化合物进一步开发旋转式装置的关键问题。在这项研究中,我们研究了AG掺杂对Heusler化合物CO_2MNSI(CMS)中化学排序增强的影响,因为AG不与CMS混合。

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