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Ion-assisted plasma etch modeling of L10 phase FePt magnetic media fabrication with embedded mask patterning method

机译:L1 0 相位孔磁介质制造具有嵌入式掩模图案化方法的离子辅助等离子体蚀刻建模

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Embedded Mask Patterning (EMP) method uses a plasma etching process to form ultra-small but thermally stable isolated L1-FePt magnetic grains with embedded Ru hardmask. It has been demonstrated as a promising and highly cost effective solution to fabricate the ultra-high density magnetic media for the next generation hard-disk drive technology, such as heat-assisted magnetic recording (HAMR). EMP process can produce recording media with extremely small and tunable grain size with narrow grain boundary thickness. For example, at 10 Tbit/in recording density the required aspect ratio of vertically etched L1-FePt bit is estimated as high as 4:1 with bit diameter ~4-5nm and grain boundary ~2-3nm. In this simulation study, we investigated manufacturability of formation of these nanometer size features in a CHOH/Ar plasma etch process which is used to etch FePt through narrow Ru mask opening and to form volatile Fe-carbonyl product. With addition of Ar gas the etch selectivity of hard mask and magnetic material can be significantly improved. In order to account for re-deposition of etch product, based on the ion-neutral synergy model we have formed a new chemical-physical etch rate model that also includes the effect of re-deposited etch product by calculating the re-deposition flux distribution in addition to neutral and ion flux coverage over the etch surface. Our simulation shows that the re-deposition rate can increase as etch progresses deeper into the substrate. It significantly reduces the etch rate more inside the higher aspect ratio (AR) features and produces non-uniform etched patterns across the grain boundary distribution, which may degrade media magnetic properties. The etch rate model is combined with a developed 2-D level set computational program to track the moving etch front at different etch time interval with the real-time etch rate distribution calcu- ation. As the result, the simulation allow us to gain insights into the etch process characteristics and to help find optimal etch parameters using the EMP process to fabricate high density recording media.
机译:嵌入式掩模图案化(EMP)方法使用等离子体蚀刻工艺形成超小但热稳定的隔离L1-FEPT磁性颗粒,其具有嵌入式Ru HardMask。已经证明是一种希望和高度成本的有效解决方案,用于制造下一代硬盘驱动技术的超高密度磁介质,例如热辅助磁记录(HAMR)。 EMP工艺可以生产具有极小且可调谐晶粒尺寸的记录介质,具有窄晶界厚度。例如,在10 Tbit /记录密度下,垂直蚀刻的L1-repEt位的所需纵横比估计高达4:1,位直径〜4-5nm和晶界〜2-3nm。在该模拟研究中,我们研究了在CHOH / AR等离子体蚀刻工艺中形成了这些纳米尺寸特征的可制造性,其用于通过窄的RU掩模开口蚀刻并形成挥发性Fe-羰基产物。随着AR气体的添加,可以显着改善硬掩模和磁性材料的蚀刻选择性。为了考虑蚀刻产品的重新沉积,基于离子中性协同效果模型,我们形成了一种新的化学物理蚀刻速率模型,该模型还包括通过计算重新沉积通量分布来重新沉积的蚀刻产品的效果除了在蚀刻表面上的中性和离子磁通覆盖外。我们的仿真表明,随着蚀刻进入基板的进展,再沉积速率可以增加。它显着降低了较高纵横比(AR)特征的蚀刻速率,并在晶粒边界分布上产生不均匀的蚀刻图案,这可能降低介质磁性。蚀刻速率模型与开发的2-D电平集计算程序组合,以跟踪不同蚀刻时间间隔的移动蚀刻前部,具有实时蚀刻速率分布计算。结果,模拟允许我们在蚀刻工艺特性中获得见解,并使用EMP过程帮助找到最佳蚀刻参数来制造高密度记录介质。

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