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The Effects of B_2O_3 Addition and Sintering Temperature on the Electrical Properties of SnO_2 based Varistors

机译:B_2O_3加法和烧结温度对基于SnO_2压敏电阻的电性能的影响

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SnO_2 based varistor ceramics, as new type of varistor materials, have attracted increasing interest around the world. However, the effect of B_2O_3 addition on novel SnO_2 based varistors is still unclear. In this paper the effects of B_2O_3 addition on the electrical properties and sintering temperature of the SnO_2-Co_2O_3-Ta_2O_5 system were investigated. The experiments revealed that addition of trivalent boron can improve the densification of SnO_2 based ceramics. The samples doped with 0.025 mol% B_2O_3 had the highest sintering density. However between 0 mol% to 0.1 mol% B_2O_3 addition region there was little effect on non-linearity and breakdown field of SnO_2-Co_2O_3-Ta_2O_5 system. Obviously, the sintering temperature had a predominant influence on the SnO_2-Co_2O_3-Ta_2O_5 system; the samples sintered at 1400°C were superior to those sintered at 1350°C.
机译:基于SnO_2的压敏电阻陶瓷,作为新型的压敏电阻材料,引起了世界各地的越来越兴趣。然而,B_2O_3添加到新型SnO_2基于基于的压敏电阻的影响仍然不明确。本文研究了B_2O_3添加对SnO_2-CO_2O_3-TA_2O_5系统的电性能和烧结温度的影响。实验表明,三价硼的添加可以改善基于SnO_2的陶瓷的致密化。掺杂有0.025mol%B_2O_3的样品具有最高的烧结密度。然而,在0mol%至0.1mol%b_2O_3加法区域之间对SnO_2-CO_2O_3-TA_2O_5系统的非线性和击穿场几乎没有影响。显然,烧结温度对SnO_2-CO_2O_3-TA_2O_5系统具有主要的影响;在1400℃下烧结的样品优于在1350℃下烧结的样品。

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