Low Temperature Deposition of beta-phase Silicon Nitride Using Inductively Coupled Plasma Chemical Vapor Deposition Technique.

摘要

Silicon nitride (SiN) films have been deposited at low temperature (<=100 deg C), by Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) technique. The chemical and physical properties of deposited SiN films such as refractive index, deposition rate, and film stress have been measured. Additional structural characterization is performed using X-ray diffraction (XRD) and Micro Raman Spectroscopy. It is found that the films obtained are of low stress and have beta-phase. To the best of authors knowledge such low temperature, low stress, beta-phase SiN films deposition using ICPCVD are being reported for the first time.