Superconformal Film Growth: Measurements and Modeling

摘要

State of the art manufacturing of microelectronic devices relies on super conformal deposition of copper for on-chip interconnects. Super filling of trenches and vias results from the interplay of rate inhibiting and accelerating adsorbates. NIST has recently identified the mechanism that explains "bottom-up" filling of submicrometer features. A quantitative capability for predicting the influence of adsorbates on supercon formal film growth has been demonstrated. The mechanism has also been shown to apply to the electrodeposition of elements beyond copper as well as CVD processing