Study on the Effect of Atmospheric Plasma Processing using gas mixture on 3C-SiC

摘要

Atmospheric plasma processing are widely used for improving surfaces properties. Cubic silicon carbide (3C-SiC) is one of the material used as biosensor for their biocompatibility properties. In this work, we present the results of atmospheric plasma processing treatments using gas mixture on 3C-SiC surface. The 3C-SiC samples were treated at different duration and flow rate. Helium/Nitrogen and Argon/Nitrogen gas mixtures were used as plasma treatments and its effect on the surface was investigated. A significant increment of surface wettability were observed after plasma exposition. Investigation by surface morphological measurements was performed by using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Contact angle measurement results showed a decreased in contact angle with increasing of treatment time and flow rate, and Argon/Nitrogen mixture promote more wettability compared to Helium/Nitrogen mixture.