Gamma irradiation induced method in preparation of Gd2O2S:Eu~(3+) phosphors: the effect of dose towards luminescent properties

摘要

A novel gamma irradiation induced synthesis method of Gd2O2S:Eu~(3+) phosphors was investigated in the presence of cetyltrimclhylammonium bromide (CTAB). The effect of irradiation doses (50-150kGy) on structural and morphology analysis as well as luminescence properties were characterized by X-ray diffraction (XRD), field emission scanning microscopy (FESEM) and photoluminescence spectrometer (PL). The results show that gamma radiation is potentially induced formation of Gd2O2S:Eu phosphors from radiation reduction and/or precipitation of insoluble compounds as the hexagonal phase structure was formed without any impurities as proven in XRD pattern. The morphologies were observed that the obtained Gd2O2S:Eu~(3+) phosphors possess sphere structure with smooth surface at 100 kGy irradiated dose. PL spectroscopy reveals that the strongest red emission peaks is located at 626 nm under 325 nm light excitation, which corresponds to ~5D_0—>~7F_2 transition of Eu~(3+) ions. An optimized dose for excellent luminescent was observed at 100 kGy. The results suggested that the Gd2O2S:Eu~(3+) phosphors may have a beneficial approach in field of imaging device or media.