Enhanced Absorption of Single Silicon Nanowire with Si_3N_4 Shell for Photovoltaic Applications

摘要

Based on the Lorenz-Mie light scattering theory, we have calculated the light absorption of single silicon nanowire with Si_3N_4 coating, and compared with pure single silicon nanowire. The calculated result indicates that there exists an enhanced absorption in the Si_3N_4-coated silicon nanowire and shows a great photocurrent enhancement factor (-70%) for the coaxial NW with the shell thickness of -70 ran. For a special shell thickness (175 nm) in the Si_3N_4-coated silicon nanowire for r = 150 nm, the enhancement comes up to -98.45%.