III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS

摘要

As Si-CMOS scaling has become increasingly challenging, III–V compound semiconductors such as InxGa1−xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III–V heterostructures on a silicon substrate to enable production on large size wafers.