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Optoelectronic and Low Temperature Thermoelectric Studies on Nanostructured Thin Films of Silver Gallium Selenide

机译:光电和低温热电学研究银镓硒化镓薄膜

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Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ~1.78eV with high absorption coefficient ~10~6/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ~2.6?m and the films showed good photo response.
机译:通过多源真空共蒸发技术沉积在超声清洗的苏打石灰玻璃基板上沉积银镓硒化镓的多晶薄膜。通过X射线衍射完成的结构分析确定了纳米结构四边形黄铜矿薄膜的形成。通过X射线光电谱证实化合物形成。原子力显微技术已被用于表面形态分析。具有高吸收系数〜10〜6 / m的直接允许的带隙〜1.78EV估计吸光光谱。在80-330K的温度范围内研究了低温热电效应,这表现出塞贝克系数的不寻常增加,声子杆朝向非常低和室温制度。评估这些n型膜的电阻率为约2.6μm,薄膜显示出良好的照片响应。

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