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Effects of X-ray and Gamma-ray Irradiation on the Optical Properties of Quantum Dots Immobilized in Porous Silicon

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The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO_2) to 16 Mrad(SiO_2).
机译:通过连续波和时间分辨的光致发光测量研究了固定在官能化多孔硅膜中固定在官能化多孔硅膜中的CDTE / CDS量子点(QDS)的光学性质对X射线和γ辐射的影响。 QDS和光致发光强度的载体寿命随着500 krad(SiO_2)至16mRad(SiO_2)的曝光剂量的增加而降低。

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