Dependence of ZnO:Ga Film Microstructure on the Magnetron Sputtering Conditions and Relation to the Thornton Zone Model

摘要

The magnetron sputtering conditions used to form ZnO:Ga films and the correspondence to the Thornton zone model were studied for the development of transparent electrodes for electronic devices applications. The microstructures of ZnO:Ga films formed at 180 °C (Zone I) and 250 °C (Zone T) were significantly different and were related to the electrical properties of the films. Films thinner than ca. 200 nm formed at 250 °C had a lower resistivity than those formed at 180 °C. In contrast, the resistivity of films formed at 180 °C that were thicker than ca. 200 nm was less than that of the films formed at 250 °C. The resistivity of a 5-μm-thick 180 °C film was as low as 2.2 μΩ·m.