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Effect of heat treatment on electrical properties of fluorine doped tin dioxide films prepared by ultrasonic spray pyrolysis technique

机译:热处理对超声波喷雾热解型氟掺杂型二氧化锡膜电性能的影响

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Fluorine doped tin dioxide (FTO) films were prepared on glass substrates by a homemade ultrasonic spray pyrolysis system and the electrical properties were improved by annealing in air. The as-deposited film was prepared from SnCl4 solution. This spray solution prepared from tin tetrachloride pentahydrate (SnCl4·5H2O) dissolved in deionized water at 0.3M concentration and NH4F was added into the solution for fluorine doping. The NH4F/SnCl4 ratio was varied as 0, 5, 10, 20 and 40 %mol, respectively. All of films were prepared at the same period of time, 15 minutes, and substrate temperatures of 300°C. The lowest resistivity of prepared films was found about 8.40x10~(-1) Ω·cm at the optimum NH4F/SnCl4 ratio of 10 %mol. The heat treatment parameters were annealed temperature and time. The annealed temperature was varying as 200, 250, 300 and 350 °C and annealed times were set at three different values as 15, 30 and 45 min. for each annealed temperature. After heat treatment process, the transmittance in the near infrared range was decreased due to the decreasing of resistivity.
机译:通过自制超声波喷雾热解系统在玻璃基板上制备氟掺杂的二氧化锡(FTO)薄膜,通过在空气中退火改善了电性能。由SnCl4溶液制备沉积的薄膜。将由四氯化锡(SnCl4·5H2O)制备的该喷雾溶液溶于0.3M浓度下的去离子水中,并加入NH 4 F的氟掺杂溶液中。 NH4F / SNCL4比分别为0,5,10,20和40%摩尔。所有薄膜在相同的时间内,15分钟和300℃的底物温度制备。在最佳NH4F / SNCL4比例为10%摩尔的最佳NH4F / SNCL4比下,制备薄膜的最低电阻率约为8.40×10〜(-1)Ω·cm。热处理参数是退火的温度和时间。退火温度为200,250,300和350℃并将退火时间设定为15,30和45分钟。对于每个退火的温度。在热处理过程之后,由于电阻率降低,近红外范围的透射率降低。

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