Improved Electroluminescence from nc-Si film Embedded in p-i-n Structure LED

摘要

Intensive electroluminescence (EL) visible to the naked eyes is observed from p-i-n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.