Improved Scanning Geometry to Collect 3D‐Geometry Data in Flat Samples

摘要

3D integration through silicon technology of integrated circuits challenges non‐destructive testing methods. 3D x‐ray methods are the techniques of choice to localize defects in interconnects. The development of high‐power x‐ray sources enabled the use of x‐ray microscopy in laboratory tools. Those devices are able to resolve features down to 40 nm in an acceptable measurement time. However, the field of view is very limited to 16 μm in high‐resolution mode and to 65 μm in large‐field‐of‐view mode. To record tomography data, the size of the samples must not exceed the field of view to circumvent specific artifacts. Semiconductor samples usually do not fulfill the condition mentioned above since they have the shape of flat sheets. Therefore limited‐angle tomography is typically used. The missing angles cause typical capping artifacts and poor signal‐to‐noise ratio. We present a modified scanning geometry that overcomes some of the artifacts and yields a better image quality. The geometry and potential applications are presented in comparison to the traditional limited‐angle tomography.