Preparation And Research of Ferroelectric Properties of Fabricated Thin Film by doping La and Nd to Bi_4Ti_3O_(12)

摘要

Ferroelectric thin films Bi_(3.25)La_(0.75)Ti_3O_(12),Bi_(3.15)Nd_(0.85)Ti_3O_(12) andBi_(3.15)(La_(0.5)Nd_(0.5))_(0.85)Ti_3O_(12) of A-site substitution of Bi_4Ti_3O_(12) were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (001) orientation. Pr values of Bi_(3.25)La_(0.75)Ti_3O_(12) , Bi_(3.15)Nd_(0.85)Ti_3O_(12) and Bi_(3.15)(La_(0.5)Nd_(0.5))_(0.85)Ti_3O_(12) thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.