Determination of interdiffiision Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling

摘要

A general method was developed for determination of interdiffusion coefficient in nanolayered structures by Auger electron spectroscopical (AES) sputter depth profiling. The procedures of this method are as follows: (1) the concentration depth profile of annealed sample is calculated from its as-grown layered structure by adopting a suitable diffusion model;;(2) this diffusion concentration depth profile is convoluted with a resolution function provided by the mixing-roughness-information depth (MRI)-model and as a result a calculated AES depth profile is obtained;(3) the interdiffusion coefficient is determined by fitting the calculated AES depth profile to the measured one.