Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

摘要

This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O_2:N_2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E_1(TO) at ～470 cm~(-1) and E_1(LO) at ～570 cm~(-1) and also shifted with different O_2:N_2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O_2:N_2 timing is increased.