首页> 外文会议>Symposium on atomic layer deposition applications >Synthesis of NbN Thin Films for Superconducting Radiofrequency (SRF) Applications by Atomic Layer Deposition to Fabricate Superconductor-Insulator-Superconductor (S-I-S) Multilayer Structures
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Synthesis of NbN Thin Films for Superconducting Radiofrequency (SRF) Applications by Atomic Layer Deposition to Fabricate Superconductor-Insulator-Superconductor (S-I-S) Multilayer Structures

机译:用原子层沉积合成超导射频(SRF)应用以制造超导体 - 绝缘体 - 超导体(S-I-S)多层结构的基础射频(SRF)应用

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RF superconductors operate in the Meissner state, where magnetic fields are expelled from the volume of the superconductor. Presently bulk niobium is used for existing superconducting radiofrequency (SRF) cavities for accelerator technology, because of a critical magnetic field (Hcl ~170mT), which exceeds those of competing materials (1,2,3). Based on recent theoretical work by Gurevich (4, 5) multiple layers of superconductor-insulator-superconductor (S-I-S) thin films are expected to surpass the total critical field limit of bulk niobium. Atomic Layer Deposition (ALD) has been suggested as a method of depositing alternating SRF layers on insulators by employing ALD Al_2O_3 as the insulating material. NbN is considered a leading alternative material for SRF films with a critical temperature Tc of 16.2 K.
机译:RF超导器在Meissner状态下操作,其中磁场从超导体的体积排出。目前,由于临界磁场(HCl〜170MT),目前散装铌用于现有超导射频(SRF)空腔,用于超过竞争材料(1,2,3)的关键磁场(HCl〜170mt)。基于Gurevich(4,5)多层超导体 - 绝缘体 - 超导体(S-I-S)薄膜的基于近期理论工作,预计将超越散装铌的总临界场极限。已经提出了原子层沉积(ALD)作为通过使用ALD AL_2O_3作为绝缘材料在绝缘体上沉积交替的SRF层的方法。 NBN被认为是具有16.2K的临界温度Tc的SRF膜的领先替代材料。

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