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Fabrication and Characterization of Hybrid DBPPV-CdSe/ZnS Quantum Dot Light-Emitting Diodes

机译:杂交DBPV-CDSE / ZnS量子点发光二极管的制造与表征

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We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-1,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m{sup}2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.
机译:我们已经证明了用2,3-二丁氧基-1,4-聚(苯基)(DBPPV)的发光复合膜的单层混合聚合物 - 量子点发光二极管(PQD-LED)的制造和表征。 CDSE / ZNS核心/壳QUANTUM点(QDS)。电气和光学特性受到发光层的厚度的显着影响。复合膜的厚度薄达约103nm时,4100cd / m {sup} 2的最大亮度以及1.35cd / a的最大发光效率分别可以分别以9.6V和7.6V实现。然而,电致发光光谱表明,排放贡献是由DBPPV发射的主导。 QDS对DBPP的最大比率为约38%,这表明QDS的贡献是次要的。此外,还研究了对器件性能的退火效果。与之前的报道相比,通过后退火可以观察到明显的改进。

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