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0.5 W High Linearity Power Amplifier for Broadband Wireless (3.3 ~ 3.9 GHz)

机译:宽带无线0.5W高线性功率放大器(3.3〜3.9 GHz)

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This paper presents a 0.5 Watt amplifier that operates over the 3.3 ~ 3.9 GHz range. The target applications are pre-driver in base-stations and power amplifier in subscriber units. The design marries good Third Order Output Intercept Point (OIP3) and exceptional Power Added Efficiency (PAE) at IdB gain compression point (PldB). The performances are: -G = 11.8 dB, IRL & ORL -8 dB, PldB = 28.5 dBm and OIP3 = 42.6 dBm. The superior performance is achieved through the use of Avago Technologies'' proprietary 0.25um GaAs Enhancement mode pHEMT process. The device requires simple matching components to achieve wide bandwidth because of the built-in input pre-match. From the reliability standpoint, pHEMT devices are eminently suited to PA use -the drain to source resistance (RDSon) will inherently rise to counteract the thermal runaway that blights bipolar and HBT PAs. The internal bias circuit is temperature compensated and can be adjusted for either class A or class AB operation. The device is housed inside a standard 16 pin LPCC 3X3 package.
机译:本文介绍了0.5瓦放大器,可在3.3〜3.9 GHz范围内运行。目标应用是在用户单元中的基站和功率放大器中的预驱动器。该设计与IDB增益压缩点(PLDB)嫁给了良好的第三阶输出截取点(OIP3)和卓越的电力附加效率(PAE)。性能是:-G = 11.8 dB,IRL&ORL <-8 dB,PLDB = 28.5 dBm和OIP3 = 42.6 dBm。通过使用Avago Technologies的“专有的0.25um GaAs增强模式PhEMT过程来实现卓越的性能。由于内置输入预匹配,该设备需要简单的匹配组件来实现宽带宽。从可靠性的角度来看,Phemt设备非常适合PA使用 - 源电阻(RDSON)的排水管将固有地升高,以抵消枯萎双极和HBT PAS的热失控。内部偏置电路是温度补偿,可以针对A类或AB级操作进行调整。该装置安装在标准16引脚LPCC 3x3封装内。

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