DIFFERENTIAL CMOS CLASS-E RF POWER AMPLIFIER

摘要

This paper presents a differential CMOS class-E power amplifier that exhibits high linearity. The amplifier operates at 900 MHz from ± 2.0-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3rd and 5th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 18 dB and 13 dB respectively.