Enhancing the Near-Infrared Responses of Porous-Si Optical-Sensing Devices with Porosity-Graded Porous-Si Structures

摘要

The near-infrared photoresponsivity and photo-to-dark current ratio of porous-silicon (PS) photodiodes have been largely enhanced by use of graded-porosity PS structures as the light-absorption layers of devices, indicating these novel PS structures had very high potential for development of highly sensitive IR photodetectors.