Nanoscale SiC Sintered Structures for Advanced Microsystems and Power Electronics Packaging

摘要

High temperature electronics packaging and advanced microsystems have been looked at as two application areas where nanoscale SiC can enhance the system performance. Nanoscale SiC samples were produced by a novel method called Plasma Pressure Compaction. The microstructures of the samples were studied. Properties of nanoscale SiC such as electrical resistivity and hardness that are critical for the above-mentioned applications; were measured. Comparisons with the literature values of these properties have reinforced the importance of a systematic study of the microstructural evolution and structure-property relationships of nanoscale SiC. The master sintering curve approach is described which will be applied to nanoscale SiC in order to model the densification, grain growth and structure-property relations in a future study.