Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN

摘要

Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5 x 10~7 cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2 x 10~8 cm/s, significantly larger than those observed for other Ⅲ-Ⅴ semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.