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Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

机译:通过模拟和观察到太赫兹排放的离子植入半导体中的载体动力学

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We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with arsenic ions, and InGaAs and InP with Fe+ iron ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.
机译:我们已经通过从裸半导体表面和由其上制造的光电导开关的一系列离子注入的半导体进行了实验测量了太赫兹辐射。将GaAs植入砷离子,并用Fe +铁离子InGaAs和InP,所有样品都被退火后植入后。在高频下观察到发射功率的增加,我们归因于载体的超快诱捕。我们使用三维载波动态模拟来模拟排放过程。模拟精确地预测了实验观察的带宽增加,而不诉诸任何拟合参数。另外,我们讨论interfalley散射,空间充电场的影响,以及基于INP,GaAs和InAs的感光发射器的相对性能。

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