Ordered mesostructured metal oxides are of enormous interest for a variety of device applications including sensor and detection arrays and low dielectric constant layers in microelectronics1.Typically these materials are prepared by co-operative self-assembly of organic structure-directing agents and suitable precursors for the inorganic framework, including silicon and other alkoxides.2,3 In particular, the formation of mesostructured films can be realized through evaporation induced interfacial self-assembly (EISA).In all cooperative assembly approaches, including EISA, the evolution of the mesostructue and the condensation of the inorganic precursor occur simultaneously.Consequently, the formation of the incipient inorganic network impedes the rapid and controlled formation of highly ordered and oriented mesostructures in thick films and monoliths.
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