High-k dielectrics fur hybrid floating gate memory applications

摘要

We report on the materials issues involved in the hybrid floating gate (HFG) device fabrication, where the interpoly dielectric is replaced by an intermetal dielectric (IMD). Indeed, in HFG the dielectric is inserted in between two metal layers in a metaldielectricmetal stack. The materials of choice were TiN as the metal layer and AI_2O_3 and HfO_2 (and their combination) as IMD. The program/erase performance is discussed based on the dielectric constant and crystallinity of the IMD and the metal-IMD interface characteristics.