Growth, structure and properties of oxide luminophor thin films obtained by pulsed laser technology

摘要

In order to form flat-panel displays with a high resolution property, the phosphor layer should possess considerable electrical conductivity and thermal stability. Thin phosphor films of zinc silicates, rare earth galats and/or multilayer system on their ground are known to satisfy these very requirements. The authors choose the following compounds of ZnSiO_4:Ti, ZnSiO_4:Mn, Zn_(0.4)Gd_(1.6)O_3:Eu, KGa_5O_8:Mn with the corresponding colour gamma luminescence as the targets for laser pulse deposition based on the above mentioned reasons. The main results on the research physical-technological conditions of the thin phosphor compound film synthesis of the of ZnSiO_4:Ti, ZnSiO_4:Mn, Zn_(0.4)Gd_(1.6)O_3:Eu, KGa_5O_8:Mn obtained by means of the reactive laser pulse evaporating with the help of quasi-closed reactive ambience are given in this work.