Evaluation of the Electrical Properties, Piezoresistivity and Noise of poly-SiGe for MEMS-above-CMOS applications

摘要

In this work, the electrical properties of heavily doped poly-SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS are reported. The properties studied are resistivity, temperature coefficient of resistance, noise, piezoresistivity, Hall mobility and effective carrier concentration. The obtained results prove the potential of using poly-SiGe as a sensing layer for MEMS-above-CMOS applications.