Vertical Alignment of Single-Walled Carbon Nanotubes on Chemically Functionalized Silicon Substrates

摘要

Carbon nanotubes have been widely investigated as an essential component for fabricating nanoelectronic devices and for their numerous applications. We investigated the vertical alignment of single-walled carbon nanotubes (SWNTs) on chemically functionalized Si surfaces using chemical reactions between chemical groups in SWNTs and surfaces. For controlling the high selectivity of a specific chemical reaction, a pre-patterned 3-D nanostructure was used by using AFM anodization lithography for achieving the vertical alignment of SWNTs. To consider the subsequent chemical reaction with chemically modified Si surface, the carboxylic acid groups were converted into acid chloride groups followed by the reaction with chemically functionalized surfaces. The protruded structures on pre-patterned areas strongly suggest the vertically oriented SWNTs, and the distribution of the vertically aligned SWNTs becomes denser and their heights are longer with prolonged reaction time. The aspect ratio of SWNTs aligned on -OH functionalized surface is independent from the reaction time (H/W = 0.2). After random alignment of relatively shorter nanotubes on the substrate, their bundle size increases with increasing the reaction time due to strong van der Waals interaction between the lateral sides of nanotubes described as 'nucleation growth'. Longer tubes get also adsorbed on the surface by increase in the bundle size and nanotube length, simultaneously. Based on the chemical reactions of the modified SWNTs with functionalized surfaces, selective attachments of SWNTs were carried out onto pre-patterned surfaces. Detailed characterization of aligned SWNTs will be discussed.