首页> 外文会议>Materials Research Society Symposium >Yield of In_xGa_(1-x)As superlattices under bending and nanoindentation
【24h】

Yield of In_xGa_(1-x)As superlattices under bending and nanoindentation

机译:在弯曲和纳米内部的in_xga_(1-x)的产量为超晶片

获取原文

摘要

A series of In_xGa_(1-x)As superlattices grown on InP substrates with differing coherency strains have been deformed by bending at 500 degC and by nanoindentation at room temperature.The deformation was characterized by transmission electron microscopy through examination of thin sections machined in a foused ion beam microscope.The bent samples sheared along [11] planes,and the most highly strained samples partially relaxed through the formation of misfit dislocations.Under indentation the majority of the plastic strain in the multilayers is accommodated by twinning whereas no twins were observed under indents in the InP substrate.The overall dimensions of the plastic zone increased linearly with indent load.
机译:一系列IN_XGA_(1-X)作为在INP衬底上生长的超晶片,其具有不同的一致性菌株通过在室温下弯曲并通过纳米温度弯曲而变形。通过透射电子显微镜通过检查在a中的薄段的透射电子显微镜表征变形。涉及离子束显微镜。沿着[11]平面剪切的弯曲样品,以及通过形成错配脱位部分松弛的弯曲样品。压痕下,多层塑性菌株的大部分塑性应变通过孪生容纳,而不观察到双胞胎在INP底物中的缩进。塑料区的整体尺寸随缩进载荷线性增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号