Quantitative optimization of the dopant concentration range in bpsg films for ulsi circuit technology

摘要

Films of borophosphosilicate glass (BPSG) are widely used in modern ULSI devices as a planarized interlayer dielectric material. BPSG films are prone to absorb moisture from ambient. This leads to defect formation and to the worsening of device metallization reliability. Approaches for quantitative characterization of the optimized dopant concentration range are developed based on summarized investigations of glass flowing properties on the device steps, BPSG moisture absorption and defects formation phenomena. Empirical equations for the calculation of the optimized dopant concentration range in BPSG films are presented.