Applying the Two-Port Lumped-Network FDTD Method to Modeling Linear Field-Effect Transistors with Nonzero Transconductance Delay Parameter

摘要

During the last decade, a considerable effort has been made to incorporate lumped-circuit elements into the FDTD framework. The resulting extended FDTD formulation, often referred to as the lumped-element (LE)-FDTD method, has made it possible to analyze successfully hybrid microwave circuits, including both distributed and lumped components. The lumped-network (LN)-FDTD method is an improvement of the LE-FDTD technique that allows linear one-port LNs to be incorporated into a single FDTD cell [1]. Very recently, the LN-FDTD method has been extended to linear two-port (TP) LNs [2]. This new formulation, referred to as the TP-LN-FDTD method, allows complex TP-LNs to be systematically and simply incorporated into FDTD simulators.