A New Self-heat Modeling Approach for LDMOS Devices

摘要

The purpose of this research is to characterize and model the self-heating effect of n-channel Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (LDMOS). In order to improve the accuracy and convergence of the self-heating (SH) simulations in DC, transient and small signal AC (S-Parameter) domains, a new SH model has been developed and implemented in Verilog-A version of BSIM4 model to simulate an LDMOS device. The new SH model does not require a separate thermal network. It has been verified with measurements in static DC, transient, and small signal AC (S-parameter). Excellent agreements between measured and simulated results have been obtained without sacrificing simulation speed and convergence performance.