Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

摘要

We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.