Compact Isomorphic Modeling of Rectangular Gate and Trigate MOSFETs

摘要

A compact analytical model is presented for the 3D electrostatics of rectangular and trigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson's equation (above threshold), where suitable 2D isomorphic functions are utilized to describe the potential distributions in the cross sections perpendicular to the source-drain axis. To account for short-channel effects, additional functional forms are used near source and drain. High precision is made possible by utilizing auxiliary boundary conditions obtained from a conformal mapping analysis. Based on the electrostatics, the drain current can be calculated in the full range of bias voltages. The model compares well with numerical calculations obtained from the ATLAS device simulator.