Study of effect of hydrostatic pressure on structural, electronic and magnetic properties of In_(0.75)Cr_(0.25)P

摘要

We have investigated the effect of hydrostatic pressure on the structural, electronic and magnetic properties of Cr doped InPdiluted magneticsemiconductorsin Zinc Blende (B3) phase at 25% concentration at different Pressure values (0 GPa to 26 GPa) using first principal calculations as implemented in SIESTA code. The study of electronic and magnetic properties show that compound is half-metallic ferromagnetsand results into 100% magnetic spin polarizationin this pressure range. It is found that forbidden energy gap increases with increase in pressure as electronic structure changes with applied pressure. Magnetic properties show that local magnetic moments on nonmagnetic atoms In & P changes with pressure.