Transient THz Photoconductivity in Dynamically Screened InGaN/GaN Quantum Wells

摘要

Using optical pump - THz probe spectroscopy we reveal complex ultrafast photoconductivity dynamics in InGaN/GaN quantum wells under dynamical screening conditions, where, at sufficiently high excitation densities, the photo-generate d carriers fully screen the initial internal field of 3 MV/cm. The THz photoconductivity spectra contain features of both localized and free charges.